Why IntelliSuite Clean Room - 12 Reasons

  1. Microloading (loading effect) and DRIE-lag (ARDE) simulation.

  2. Blueprint-- Professional Mask Editor

  3. Fast simulations that match the experiments

  4. Extensive database

  5. High-index off-cut substrates beyond standard wafer orientations and flats

  6. Different etch rates for Si(111) depending on the inclination angle

  7. Characterize your etchant to understand how it etches

  8. Convex corner undercutting and compensation

  9. Complex processing with multiple etching steps

  10. Submicron, nanoscale etching

  11. Diffusion-limited isotropic etching

  12. Up to three cross-sections with geometrical measurements

DRIE

DRIE

BP

BP

Wet_Etch

Wet_Etch

ERV

ERV

HighIndex

HighIndex

EtchRates

EtchRates

ISLogo

ISLogo

WWA

WWA

CornerCompensation

CornerCompensation

MultipleEtch

MultipleEtch

NanoScaleEtch

NanoScaleEtch

DiffusionLimited

DiffusionLimited

GeometricalMeasurements

GeometricalMeasurements

Wet_Etch